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An Insight into the High Current ESD Behavior of Drain Extended NMOS (DENMOS) Devices in Nanometer Scale CMOS Technologies

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5 Author(s)
Amitabh Chatterjee ; Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 ; Sameer Pendharkar ; Yen-Yi Lin ; Charvaka Duvvury
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Second breakdown phenomenon (It2) in drain extended NMOS (DENMOS) which is associated with complex triggering of the parasitic BJT is relatively less understood. We present experiments and models to understand the physics of snapback in DENMOS in nanometer scale technologies. Avalanche injection phenomenon at the drain contact has been analyzed for a 90 nm DENMOS transistor under high current stressing

Published in:

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

Date of Conference:

15-19 April 2007