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Evaluation of SCR-Based ESD Protection Devices in 90nm and 65nm CMOS Technologies

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4 Author(s)
Di Sarro, J. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL ; Chatty, K. ; Gauthier, R. ; Rosenbaum, E.

The authors compare a number of promising SCR-based ESD protection devices in 90nm and 65nm CMOS technologies implemented with a consistent layout. The devices are evaluated using ESD metrics such as trigger voltage and current, on-resistance, failure current, turn-on time and DC leakage current. The authors also report that SCR turn-on time is highly dependent on the amplitude of the applied pulse.

Published in:

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Date of Conference:

15-19 April 2007