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Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications

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10 Author(s)
Jung-Geun Jee ; Semicond. R & D center, Samsung Electron. Co., Ltd., Gyeonggi-Do ; WookHyun Kwon ; Woong Lee ; Jung-Hyun Park
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The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during annealing, and the kinds of re-oxidizing materials, the Vth shifts post cycling and after post-cycling bake were decreased to the level of 28% and 42% of conventional NO annealed tunnel oxide, respectively.

Published in:

Reliability physics symposium, 2007. proceedings. 45th annual. ieee international

Date of Conference:

15-19 April 2007