Referenced Items are not available for this document.
The effects of different initial Ni layer thickness and various anneal times during the nickel silicidation process have been investigated as a function of rapid thermal annealing temperature between 200 and 800degC. By means of electrical and optical measurements the Ni silicide phase transformations are explained. Spectroscopic ellipsometry has been used to measure Ni and Ni silicide thickness. An oxide on the Ni layer was found to be generated, if the time between Ni deposition and annealing is not short enough. Also a method to monitor the Ni silicidation process on RTP systems was introduced
Published in:
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Date of Conference: 10-13 Oct. 2006
- Page(s):
- 237 - 242
- E-ISBN :
- 1-4244-0649-8
- Print ISBN:
- 1-4244-0648-X
- INSPEC Accession Number:
- 9431604
- Conference Location :
- Kyoto
- Digital Object Identifier :
- 10.1109/RTP.2006.368006
- Product Type:
- Conference Publications
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