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Mechanical Stress in Silicon Based Materials: Evolution Upon Annealing and Impact on Devices Performances

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1 Author(s)
Pierre Morin ; ST Microelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France

An overview of the mechanical stress mechanisms observed within as deposited silicon oxide and nitride films deposited by the different techniques used for the CMOS transistors integration is presented in this paper. The evolution of the stress along the integration flow is described, with emphasize in the annealing steps. The impact of the film stress on the device is finally discussed especially in the case of integration of the shallow trench insulators and of the stress memorization technique

Published in:

2006 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors

Date of Conference:

10-13 Oct. 2006