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Annealing temperature dependence of terahertz wave detection by low-temperature-grown-GaAs-based photoconductive antennas gated by 1560 nm optical pulses

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11 Author(s)
Suzuki, M. ; Osaka Univ., Osaka ; Tonouchi, M. ; Kamakura, M. ; Kadoya, Y.
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We have studied THz detection performance of low-temperature-grown GaAs (LT-GaAs) photoconductive switches gated with 1560-nm-optical pulses. LT-GaAs is annealed in the range of 500-600degC. Although the sample annealed at 600degC is most sensitive at frequencies below 1 THz, that annealed at 550degC is superior to others at higher frequencies than 1 THz.

Published in:
Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics, 2006. IRMMW-THz 2006. Joint 31st International Conference on

Date of Conference: 18-22 Sept. 2006

Page(s):
429
E-ISBN :
1-4244-0400-2
Print ISBN:
1-4244-0400-2
INSPEC Accession Number:
9694104
Conference Location :
Shanghai
Digital Object Identifier :
10.1109/ICIMW.2006.368637
Product Type:
Conference Publications

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