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Semiconductor terahertz oscillators and nonlinear dynamics

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1 Author(s)
J. C. Cao ; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information, Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R. China.

We study the negative differential resistance in negative-effective-mass (NEM) semiconductors. The NEM diodes based on the NDR mechanisms have a self-oscillating frequency in the terahertz range. We have investigated the electric domain dynamics in the diodes under dc electric field, and nonlinear dynamics driven by dc+ac voltages.

Published in:

2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics

Date of Conference:

18-22 Sept. 2006