By Topic

Semiconductor terahertz oscillators and nonlinear dynamics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
J. C. Cao ; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information, Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, P. R. China. jccao@mail.sim.ac.cn

We study the negative differential resistance in negative-effective-mass (NEM) semiconductors. The NEM diodes based on the NDR mechanisms have a self-oscillating frequency in the terahertz range. We have investigated the electric domain dynamics in the diodes under dc electric field, and nonlinear dynamics driven by dc+ac voltages.

Published in:

2006 Joint 31st International Conference on Infrared Millimeter Waves and 14th International Conference on Teraherz Electronics

Date of Conference:

18-22 Sept. 2006