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We present a novel epitaxial lift-off technique for the fabrication of THz antenna array structures on low temperature grown (LT) GaAs. The radiated electric field of the array shows an increase compared to single element emitters, due to the constructive interference of the individual array elements in the emitter far-field. We have demonstrated this emitter in pulsed THz operation, however simulations have shown that this type of structure can also be used for continuous wave (cw) THz generation.
Date of Conference: 18-22 Sept. 2006