Cart (Loading....) | Create Account
Close category search window
 

Process Variation Study for Silicon Nanowire Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mehrotra, Saumitra R ; Electrical & Computer Engineering, University of Cincinnati, Cincinnati, OH 45220 USA ; Roenker, K.P.

This paper examines the sensitivity of silicon nanowire transistors to process variations. Silicon nanowire MOSFETs are effective in controlling short channel effects, but at the same time suffer from threshold voltage degradation due to the quantum confinement effect. In this study we have investigated the effects on the device characteristics of process variations due to body thickness, gate length and gate dielectric thickness. The results have been compared with previous results for the FinFET and the differences quantified. The nanowire MOSFET is found to exhibit significantly less short channel effects relative to a comparable FinFET structure, but to have a larger threshold voltage variation with the diameter at a diameter less than 4 nm.

Published in:

Microelectronics and Electron Devices, 2007. WMED 2007. IEEE Workshop on

Date of Conference:

20-20 April 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.