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Top-emitting OLED pixel employing cathode-contact structure with a-Si:H thin-film transistors

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7 Author(s)
Han, C.-W. ; Sch. of Electr. Eng., Seoul Nat. Univ., Seoul ; Han, M.K. ; Kim, M.S. ; Nam, W.-J.
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An active-matrix organic light emitting diode (OLED) display employing a hydrogenated amorphous silicon thin-film transistor prefers a cathode-contact structure to an anode-contact structure. A new normal top-emitting OLED employing cathode-contact structure is proposed. To implement normal OLED structure, the cathode layer on top is separated as sub-pixels by a negative photoresist separator. The current of the cathode-contact structure is maintained 20% higher after 20 h than that of the anode-contact structure during the accelerated life test.

Published in:

Electronics Letters  (Volume:43 ,  Issue: 11 )

Date of Publication:

May 24 2007

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