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This work presents studies of electrical and optical properties of thin films of oxides based on titanium dioxide prepared by low pressure hot target magnetron sputtering form metallic target. It has been shown that incorporation of Pd and Eu dopants into TiO2 matrix could modify its properties to obtain electrically and optically active oxide-semiconductor with desired type of electrical conduction at room temperature. Thin films of Ti-Pd-Eu oxides were found to be n-type semiconductors. An intense red luminescence (615 nm), corresponding to working range of typical silicon devices, makes the possibility of application such thin films in junction-based photoelectric devices.