Cart (Loading....) | Create Account
Close category search window
 

Transient Charging and Discharging Behaviors of Border Traps in the Dual-Layer HfO2/SiO2 High- κ Gate Stack Observed by Using Low-Frequency Charge Pumping Method

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Wei-Hao Wu ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu ; Tsui, Bing-Yue ; Chen, Mao-Chieh ; Yong-Tian Hou
more authors

Transient charging and discharging of border traps in the dual-layer HfO2/SiO2 high-kappa gate stack have been extensively studied by the low-frequency charge pumping method with various input pulse waveforms. It has been demonstrated that the exchange of charge carriers mainly occurs through the direct tunneling between the Si conduction band states and border traps in the HfO2 high-kappa dielectric within the transient charging and discharging stages in one pulse cycle. Moreover, the transient charging and discharging behaviors could be observed in the time scale of 10-8- 10-4 s and well described by the charge trapping/detrapping model with dispersive capture/emission time constants used in static positive bias stress. Finally, the frequency and voltage dependencies of the border trap area density could also be transformed into the spatial and energetic distribution of border traps as a smoothed 3-D mesh profiling

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 6 )

Date of Publication:

June 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.