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Analog/RF Performance of Si Nanowire MOSFETs and the Impact of Process Variation

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9 Author(s)
Runsheng Wang ; Inst. of Microelectron., Peking Univ., Beijing ; Jing Zhuge ; Ru Huang ; Yu Tian
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In this paper, the analog/RF performance of Si nanowire transistors (SNWTs) and the impact of process variation are investigated for the first time. Analog/RF figures of merit of SNWTs are studied, including transconductance efficiency gm/Id, intrinsic gain gm/gd, cutoff frequency ft , and maximum oscillation frequency fmax. The results indicate that SNWTs exhibit superior intrinsic RF scaling capability and are suitable for low-power analog/RF applications. The impact of nanowire cross-sectional shape fluctuation that is caused by process variation is studied and found to be relatively severe, and the acceptable variation tolerance for RF integrated circuit design is given

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IEEE Transactions on Electron Devices  (Volume:54 ,  Issue: 6 )