Referenced Items are not available for this document.
It has been known that adjacent Pd enhances the crystallization rate in Ni metal-induced lateral crystallization (Ni-MILC) and this knowledge has been used to fabricate the unidirectional MILC thin-film transistors (TFTs), which eliminate the boundary formed at the center of TFT channel in a normal MILC TFTs. It is discovered that the MILC/MILC boundary (MMB) is responsible for the high leakage current and low field- effect mobility. The electrical properties of unidirectional MILC TFTs (Width/Length = 10/10 mum) improved considerably comparing to those of MILC TFTs containing the MMB. The leakage current and field-effect mobility, which have been regarded as obstacles for industrialization of the MILC process, measure to be 2.1 X 10-11 A and 83 cm2/ V ldr s, respectively.
Published in:
Electron Devices, IEEE Transactions on
(Volume:54
,
Issue:
6
)
Date of Publication: June 2007
- Page(s):
- 1420 - 1424
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 9882368
- Digital Object Identifier :
- 10.1109/TED.2007.896357
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 29 May 2007
- Issue Date :
- June 2007
- Sponsored by :
- IEEE Electron Devices Society
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