Spatial Distributions of Trapping Centers in $ \hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

An analysis methodology for charge pumping (CP) measurements was developed and applied to extract spatial distributions of traps in SiO
₂
/HfO
₂
gate stacks. This analysis indicates that the traps accessible by CP measurements in the frequency range down to a few kilohertz are located primarily within the SiO
₂
layer and HfO
₂
/SiO
₂
interface region. The trap density in the SiO
₂
layer increases closer to the high-kappa dielectric, while the trap spatial profile as a function of the distance from the high-kappa film was found to be dependent on high-kappa film characteristics. These results point to interactions with the high-kappa dielectric as a cause of trap generation in the interfacial SiO
₂
layer