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Spatial Distributions of Trapping Centers in HfO2/SiO2 Gate Stack

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8 Author(s)

An analysis methodology for charge pumping (CP) measurements was developed and applied to extract spatial distributions of traps in SiO 2/HfO2 gate stacks. This analysis indicates that the traps accessible by CP measurements in the frequency range down to a few kilohertz are located primarily within the SiO2 layer and HfO2/SiO2 interface region. The trap density in the SiO2 layer increases closer to the high-kappa dielectric, while the trap spatial profile as a function of the distance from the high-kappa film was found to be dependent on high-kappa film characteristics. These results point to interactions with the high-kappa dielectric as a cause of trap generation in the interfacial SiO2 layer

Published in:

Electron Devices, IEEE Transactions on  (Volume:54 ,  Issue: 6 )

Date of Publication:

June 2007

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