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A Monolithic High-Efficiency 2.4-GHz 20-dBm SiGe BiCMOS Envelope-Tracking OFDM Power Amplifier

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5 Author(s)
Feipeng Wang ; Univ. of California at San Diego, La Jolla ; Donald F. Kimball ; Donald Y. Lie ; Peter M. Asbeck
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A monolithic SiGe BiCMOS envelope-tracking power amplifier (PA) is demonstrated for 802.11g OFDM applications at 2.4 GHz. The 4-mm2 die includes a high-efficiency high-precision envelope amplifier and a two-stage SiGe HBT PA for RF amplification. Off-chip digital predistortion is employed to improve EVM performance. The two-stage amplifier exhibits 12-dB gain, <5% EVM, 20-dBm OFDM output power, and an overall efficiency (including the envelope amplifier) of 28%.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:42 ,  Issue: 6 )