By Topic

Thermal Metrology of Silicon Microstructures Using Raman Spectroscopy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Mark R. Abel ; George W. Woodruff Sch. of Mech. Eng., Georgia Inst. of Technol., Atlanta, GA ; Tanya L. Wright ; William P. King ; Samuel Graham

Thermal metrology of an electrically active silicon heated atomic force microscope cantilever and doped polysilicon microbeams was performed using Raman spectroscopy. The temperature dependence of the Stokes Raman peak location and the Stokes to anti-Stokes intensity ratio calibrated the measurements, and it was possible to assess both temperature and thermal stress behavior with resolution near 1mum. The devices can exceed 400degC with the required power depending upon thermal boundary conditions. Comparing the Stokes shift method to the intensity ratio technique, non-negligible errors in devices with mechanically fixed boundary conditions compared to freely standing structures arise due to thermally induced stress. Experimental values were compared with a finite element model, and were within 9% of the thermal response and 5% of the electrical response across the entire range measured

Published in:

IEEE Transactions on Components and Packaging Technologies  (Volume:30 ,  Issue: 2 )