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7-GHz Inverted-F Antenna Monolithically Integrated with CMOS LNA

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8 Author(s)
Ueo, D. ; Hokkaido Univ., Sapporo ; Osabe, H. ; Inafune, K. ; Ikebe, M.
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Transmitter and receiver antennas monolithically integrated with CMOS LSIs are strongly demanded for reducing the cost of wireless equipment. As the first step toward realizing high-performance antennas on lossy Si substrates, we clarify the design methodology and basic characteristics of inverted-F antennas used for the 7-GHz band corresponding to multi-band OFDM UWB group3 spectrum allocation. An inverted-F antenna along with a low-noise amplifier (LNA) are designed and fabricated using a 0.18-mum mixed signal/RF CMOS process with one poly and six metal layers. Comparisons between measured and calculated antenna gain characteristics are made. Measured antenna gain is about -25 dB in the multi-band OFDM UWB group3 frequency band. Fairly good agreement between measured and designed gains is obtained by taking account of the real geometry of the fabricated chip

Published in:

Intelligent Signal Processing and Communications, 2006. ISPACS '06. International Symposium on

Date of Conference:

12-15 Dec. 2006

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