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Enhancement-Mode Buried-Channel \hbox {In}_{0.7} \hbox {Ga}_{0.3}\hbox {As/In}_{0.52}\hbox {Al}_{0.48}\hbox {As} MOSFETs With High- \kappa Gate Dielectrics

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14 Author(s)

The operation of long- and short-channel enhancement-mode In0.7Ga0.3As-channel MOSFETs with high-k gate dielectrics are demonstrated for the first time. The devices utilize an undoped buried-channel design. For a gate length of 5 mum, the long-channel devices have Vt= +0.25 V, a subthreshold slope of 150 mV/dec, an equivalent oxide thickness of 4.4 +/ - 0.3 nm, and a peak effective mobility of 1100 cm2/Vldrs. For a gate length of 260 nm, the short-channel devices have Vt=+0.5 V and a subthreshold slope of 200 mV/dec. Compared with Schottky-gated high-electron-mobility transistor devices, both long- and short-channel MOSFETs have two to four orders of magnitude lower gate leakage.

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 6 )