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35-nm InP HEMT SMMIC Amplifier With 4.4-dB Gain at 308 GHz

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19 Author(s)
Mei, X.B. ; Northrop Grumman Corp., Redondo Beach ; Yoshida, W. ; Deal, W.R. ; Liu, P.H.
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rdquoWe report the first submillimeter-wave monolithic microwave integrated circuit (MMIC) amplifier with 4.4-dB measured gain at 308-GHz frequency, making it the highest frequency MMIC amplifier reported to date. In this letter, a 35-nm InP high-electron mobility transistor process has been successfully developed with a projected maximum available gain of greater than 7 dB at 300 GHz. The excellent dc and RF performance makes it suitable for applications at frequencies well into the millimeter-wave band and, for the first time, in the submillimeter- wave band as well.

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 6 )