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Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses

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10 Author(s)
Yongxun Liu ; Nat. Inst. of Adv. Ind. Sci. & Technol., Ibaraki ; Takashi Matsukawa ; Kazuhiko Endo ; Meishoku Masahara
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Cointegration of titanium nitride (TiN)-gate high-performance tied-gate three-terminal FinFETs with symmetric gate-oxide thicknesses (tox1=tox2=1.7 nm) and variable threshold-voltage Vth independent-gate four-terminal (4T) FinFETs with asymmetric gate-oxide thicknesses (tox1=1.7 nm for the driving-gate-oxide, and tox2=3.4 or 7.0 nm for the control-gate-oxide) has been successfully developed using conventional reactive sputtering, two-step Si-fin and gate-oxide formation, and resist etch-back processes. A significantly improved subthreshold slope and an extremely low OFF-state current Ioff are experimentally confirmed in the asymmetric gate-oxide thickness 4T FinFETs by increasing the control-gate-oxide thickness to twice or more the driving-gate-oxide thickness. The developed techniques are attractive for high-performance and low-power FinFET very large-scale integration circuits

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IEEE Electron Device Letters  (Volume:28 ,  Issue: 6 )