Referenced Items are not available for this document.
The notion of a "potential well" for charge storage in the floating body of the "capacitorless" DRAM cell is shown to be inadequate and misleading. The basic operation of the floating-body MOSFET cell (FBC) is physically overviewed, with supportive numerical device simulations and analytical modeling. New insights are revealed, including identification of the intrinsic dynamic capacitors that actually store the body charge. Multiple roles of an accumulation layer that is needed in fully depleted FBCs are physically defined for the first time. Optimal FBC designs are implied
Published in:
Electron Device Letters, IEEE
(Volume:28
,
Issue:
6
)
Date of Publication: June 2007
- Page(s):
- 513 - 516
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 9501735
- Digital Object Identifier :
- 10.1109/LED.2007.896883
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 29 May 2007
- Issue Date :
- June 2007
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
