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Embedded TFT nand-Type Nonvolatile Memory in Panel

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4 Author(s)
Hung-Tse Chen ; Display Technol. Center, Ind. Technol. Res. Inst., Hsinchu ; Szu-I Hsieh ; Chrong-Jung Lin ; Ya-Chin King

A new NAND-type nonvolatile memory with a field-enhancing tip structure embedded in low-temperature polycrystalline silicon (LTPS) panel was demonstrated on a glass substrate for the first time. A thin-film transistor (TFT) metal-oxide-nitride-oxide-silicon (MONOS) device based on sequential lateral solidification crystallization with a fully depleted poly-Si channel, an oxide-nitride-oxide stack gate dielectric, and a metal gate is integrated into a NAND array. A NAND test array based on p-channel LTPS TFTs exhibits good cycling endurance and data retention properties and negligible program and read disturbance. These results strongly support the claim that this TFT-MONOS device is a promising candidate for use in embedded nonvolatile memory for system-on-panel and 3-D IC applications

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 6 )