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High-efficiency continuous oscillations in silicon IMPATT diodes below the transit-time frequency

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1 Author(s)

C.W. room-temperature operation of silicon IMPATT diodes at the first subharmonic of the transit-time frequency has been observed in a high-efficiency mode. Efficiencies as high as 8.8% at 5GHz with 1.2 Wc.w. have been achieved with current densities no more than 1480A/cm2.

Published in:

Electronics Letters  (Volume:5 ,  Issue: 11 )