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Evidence of transit-time effects in silicon n-v-n space-charge-limited current (s.c.l.c.) solid-state devices

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2 Author(s)
Chisholm, S.H. ; McMaster University, Electrical Engineering Department & Institute of Materials Research, Hamilton, Canada ; Yeh, Chuan-Sung

Transit-time effects have been observed in silicon n-v-n s.c.l.c. solid-state devices, with the reciprocal transit-time frequency being bias dependent, and the oscillatory behaviour of the device high-frequency conductance being relatively reduced as expected. For n-v-n (silicon) s.c.l.c. solid-state devices, these results appear to be the first experimental evidence of such effects.

Published in:

Electronics Letters  (Volume:4 ,  Issue: 23 )