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Trapping levels in silicon nitride

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1 Author(s)
E. J. M. Kendall ; University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK

The trapping levels in silicon nitride have been investigated using the thermally stimulated current technique. Traps at between 0.50 and 0.90eV below the conduction band of the nitride were found, as well as a distribution of traps at and near the silicon-silicon nitride interface about 0.10eV below the conduction band of the silicon.

Published in:

Electronics Letters  (Volume:4 ,  Issue: 21 )