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Space-charge-limited insulated-gate surface-channel transistor (s.c.l. i.g.f.e.t.)

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1 Author(s)
Wright, G.T. ; University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK

Preliminary experimental results are reported on insulated-gate field-effect transistors made in high-resistivity (near-intrinsic silicon substrates. Operation occurs under space-charge-limited conditions, and maximum transconductance and minimum parasitic capacitances for this kind of device are thus obtained. Some implications for integrated monolithic microelectronics are discussed.

Published in:

Electronics Letters  (Volume:4 ,  Issue: 21 )