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Numerical study of avalanche multiplication in silicon p--n abrupt junctions

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1 Author(s)
Urgell, J. ; CRNS, Laboratoire d'Automatique et de ses Applications Spatiales, Toulouse, France

The behaviour of two abrupt junctions p+,/sup>--n and n+--p in the avalanche-breakdown mode for specific boundary conditions is investigated by the author. An empirical relation between the breakdown voltages of two complementary units is then developed. Numerical data for the Miller's exponent 'n' and analytical expressions previously given by the author are compared.

Published in:

Electronics Letters  (Volume:4 ,  Issue: 21 )