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Certain Failure Mechanisms in Two-Level Poly-Si Gate Structures - A Transmission Electron Microscopy Study

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6 Author(s)
Sinha, A.K. ; Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974 ; Sheng, T.T. ; Shankoff, T.A. ; Lindenberger, W.S.
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In order to reveal lower-than-normal voltage oxide breakdown mechanisms in two-level overlapping poly-Si gate structures, we have examined high resolution cross-sections in the transmission electron microscope. It is shown that the gate oxide undercut of polyI prior to the reoxidation step can lead to a significant localized thinning and/or trapped voids in the regrown oxide.

Published in:

Reliability Physics Symposium, 1979. 17th Annual

Date of Conference:

April 1979