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Magnetization Reversal Technique of DyTbFeCo Films at Magnetic Field as Low as 1/6 of Coercivity Using a Stress-Induced Magnetic Anisotropy

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2 Author(s)
Michiya Yamada ; Dept. of Phys. Electron., Tokyo Inst. of Technol. ; Shigeki Nakagawa

A method to cause magnetization reversal in rare earth-transition metal (RE-TM) films at low magnetic field for perpendicular magnetic random access memory (MRAM) was demonstrated. The magnetic anisotropy was changed from perpendicular to in-plane in DyFeCo and TbDyFeCo films while the mechanical tensile stress is applied to the films. It is succeeded to cause magnetization reversal at low magnetic field as low as 1/6 of original coercivity of the film

Published in:

IEEE Transactions on Magnetics  (Volume:43 ,  Issue: 6 )