By Topic

Suppression of Switching-Field Variation by Surface Oxidation Depending on the Shape of the CoFeB Free Layer

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
T. Takenaga ; Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amgasaki ; T. Kuroiwa ; J. Tsuchimoto ; R. Matsuda
more authors

We investigated the suppression of the variation of switching field Hsw by reducing magnetization M in submicron-sized magnetic tunnel junctions (MTJs) by oxidizing the surface of the CoFeB layer. Examination confirmed a reduction in the M of oxidized CoFeB film. The results also confirmed that oxidization enlarges anisotropy field Hk of CoFeB films. We applied this film to the free layer of submicron-sized MTJs of various aspect ratios. The results revealed that Hsw variation depending on the aspect ratio is reduced more with oxidation than without. We confirmed that Hsw variation in submicron-sized MTJs originating in the CoFeB free layer's shape decreased due to the oxidation, which reduced the switching field distribution (SFD) for the MTJs

Published in:

IEEE Transactions on Magnetics  (Volume:43 ,  Issue: 6 )