By Topic

Asymmetric Spin Torque Transfer in Nano GMR Device With Perpendicular Anisotropy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Meng, Hao ; Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN ; Jian-Ping Wang

Spin torque transfer behaviors in giant magnetoresistive (GMR) devices with perpendicular anisotropy were investigated. The critical switching current density could be effectively reduced by an inserted nano-current-channel layer through the current confined effect and the magnetic exchange coupling composite effect. Depending on the location of the nano-current-channel layer inside the device, the reduction of the critical switching current density could be symmetric (or asymmetric) for the switching processes between parallel and anti parallel configurations. With strong current confined and exchange coupling composite effects, the reduction is up to 52% for parallel rarr anti-parallel switching while it is only 31% for anti-parallel rarr parallel switching

Published in:

Magnetics, IEEE Transactions on  (Volume:43 ,  Issue: 6 )