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Light–Output Enhancement of Nano-Roughened GaN Laser Lift-Off Light-Emitting Diodes Formed by ICP Dry Etching

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8 Author(s)
Chih-Chiang Kao ; Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu ; H. C. Kuo ; K. F. Yeh ; J. T. Chu
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In this paper, we report the fabrication and characteristics of nano-roughened GaN laser lift-off (LLO) light-emitting diodes (LEDs) with different scale surface roughness. The surface roughness of devices was controlled by inductively coupled plasma reactive ion etching. Using this fabrication method to form nano-scaled roughness, the electrical property was almost not degraded. Furthermore, the light-output power and wall-plug efficiency of LLO LED could be both significantly enhanced about two times using this simple method

Published in:

IEEE Photonics Technology Letters  (Volume:19 ,  Issue: 11 )