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A New Capacitorless 1T DRAM Cell: Surrounding Gate MOSFET With Vertical Channel (SGVC Cell)

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12 Author(s)
Hoon Jeong ; Sch. of Electr. Eng., Seoul Nat. Univ. ; Ki-Whan Song ; Il Han Park ; Kim, Tae-Hun
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We propose a surrounding gate MOSFET with vertical channel (SGVC cell) as a 1T DRAM cell. To confirm the memory operation of the SGVC cell, we simulated its memory effect and fabricated the highly scalable SGVC cell. According to simulation and measurement results, the SGVC cell can operate as a 1T DRAM having a sufficiently large sensing margin. Also, due to its vertical channel structure and common source architecture, it can readily be made into a 4F2 cell array

Published in:

Nanotechnology, IEEE Transactions on  (Volume:6 ,  Issue: 3 )

Date of Publication:

May 2007

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