Referenced Items are not available for this document.
We propose a surrounding gate MOSFET with vertical channel (SGVC cell) as a 1T DRAM cell. To confirm the memory operation of the SGVC cell, we simulated its memory effect and fabricated the highly scalable SGVC cell. According to simulation and measurement results, the SGVC cell can operate as a 1T DRAM having a sufficiently large sensing margin. Also, due to its vertical channel structure and common source architecture, it can readily be made into a 4F2 cell array
Published in:
Nanotechnology, IEEE Transactions on
(Volume:6
,
Issue:
3
)
Date of Publication: May 2007
- Page(s):
- 352 - 357
- ISSN :
- 1536-125X
- INSPEC Accession Number:
- 9503987
- Digital Object Identifier :
- 10.1109/TNANO.2007.893575
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 15 May 2007
- Issue Date :
- May 2007
- Sponsored by :
- IEEE Nanotechnology Council
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