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Electron and Hole Current Characteristics of n-i-p-Type Semiconductor Quantum Dot Transistor

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3 Author(s)
Fujihashi, C. ; Dept. of Appl. Comput. Sci., Tokyo Polytech. Univ., Atsugi ; Yukiya, T. ; Asenov, A.

For the future development of semiconductor quantum dot transistors, a novel n-i-p-type semiconductor quantum dot transistor consisting of an n-type source, an i-type dot, and a p-type drain is presented in this paper. The explicit steady-state solution to a set of an infinite number of stochastic theoretical probability equations is given. The solution is applicable to both metal and semiconductor quantum dot transistors. The electron and hole current characteristics controlled by means of the gate voltage are computed numerically, and it is pointed out that the electron or hole current state can be selected by applying a positive or negative gate voltage

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Nanotechnology, IEEE Transactions on  (Volume:6 ,  Issue: 3 )