Cart (Loading....) | Create Account
Close category search window
 

Electron and Hole Current Characteristics of n-i-p-Type Semiconductor Quantum Dot Transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Fujihashi, C. ; Dept. of Appl. Comput. Sci., Tokyo Polytech. Univ., Atsugi ; Yukiya, T. ; Asenov, A.

For the future development of semiconductor quantum dot transistors, a novel n-i-p-type semiconductor quantum dot transistor consisting of an n-type source, an i-type dot, and a p-type drain is presented in this paper. The explicit steady-state solution to a set of an infinite number of stochastic theoretical probability equations is given. The solution is applicable to both metal and semiconductor quantum dot transistors. The electron and hole current characteristics controlled by means of the gate voltage are computed numerically, and it is pointed out that the electron or hole current state can be selected by applying a positive or negative gate voltage

Published in:

Nanotechnology, IEEE Transactions on  (Volume:6 ,  Issue: 3 )

Date of Publication:

May 2007

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.