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Buried heterostructure Ga0.2In0.8As strained-layer (strain 1.8%) separate confinement, multiple quantum well laser diodes emitting at 1.5 mu m were fabricated by hybrid LPMOVPE/LPE. Improved performance as a result of the application of a strained-layer active region is demonstrated for the first time. A CW threshold current of 10 mA, differential quantum efficiency of 82%, T0 of 97 K and maximum output powers/facet as high as 70 mW CW and 180 mW for pulsed operation were measured. Lifetests at 60 degrees C heat-sink temperature and 5 mW output power show almost no degradation after 2000h.