By Topic

High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 mu m

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Thijs, P.J.A. ; Philips Res. Labs., Eindhoven, Netherlands ; van Dongen, T.

Buried heterostructure Ga0.2In0.8As strained-layer (strain 1.8%) separate confinement, multiple quantum well laser diodes emitting at 1.5 mu m were fabricated by hybrid LPMOVPE/LPE. Improved performance as a result of the application of a strained-layer active region is demonstrated for the first time. A CW threshold current of 10 mA, differential quantum efficiency of 82%, T0 of 97 K and maximum output powers/facet as high as 70 mW CW and 180 mW for pulsed operation were measured. Lifetests at 60 degrees C heat-sink temperature and 5 mW output power show almost no degradation after 2000h.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 25 )