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High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 mu m

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2 Author(s)
P. J. A. Thijs ; Philips Res. Labs., Eindhoven, Netherlands ; T. Van Dongen

Buried heterostructure Ga0.2In0.8As strained-layer (strain 1.8%) separate confinement, multiple quantum well laser diodes emitting at 1.5 mu m were fabricated by hybrid LPMOVPE/LPE. Improved performance as a result of the application of a strained-layer active region is demonstrated for the first time. A CW threshold current of 10 mA, differential quantum efficiency of 82%, T0 of 97 K and maximum output powers/facet as high as 70 mW CW and 180 mW for pulsed operation were measured. Lifetests at 60 degrees C heat-sink temperature and 5 mW output power show almost no degradation after 2000h.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 25 )