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Low threshold current 1.3 mu m GaInAsP lasers grown on GaAs substrates

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5 Author(s)
Omura, E. ; Mitsubishi Electr. Corp., Hyogo, Japan ; Uesugi, H. ; Kimura, T. ; Kawama, Y.
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A CW threshold current of 31 mA at room temperature has been realised in 1.3 mu m GaInAsP diode lasers grown on GaAs substrates by the metalorganic chemical vapour deposition technique. A comparison of characteristics of InP- and GaAs-substrate lasers is given.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 25 )