Cart (Loading....) | Create Account
Close category search window
 

Numerical Modeling of a Coaxial-Type Focusing Carbon-Nanotube Emitter Considering Space-Charged Effects

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Wu, J.-S. ; Dept. of Mech. Eng., Nat. Chiao Tung Univ., Hsinchu ; Hsu, K.-H. ; Hong, C.-T. ; Chen, L.-H.

Summary form only given. In the past, prediction of field-emission properties has generally ignored the space-charged effects caused by the emitted electrons near the emitting surface. Normal procedures of predicting the field-emission properties are, first, to solve the Poisson's equation once and for all and, then, move the emitted electrons following the predicted unchanged electric field. However, it has been shown that the resulting emitted current is strongly dominated by the space-charged effect as well as the local fields near the emitting surface. Thus, it is necessary to solve the electrical field self-consistently by taking into account the movement of emitted electrons in the cell. In this paper, field-emission properties of a coaxial-type carbon-nanotube emitter are simulated using a parallel 3D PIC code utilizing unstructured tetrahedral mesh, which is presented in another paper in this meeting. Use of multiple gates not only enhances the local electrical fields near the emitting cathode, but also it helps to focus and control the electron flow onto the anode that is important in designing the field emission display. Computational cells near the emitting surface are refined adaptively according to the improved solution using the parallel adaptive mesh refinement module (PAMR). Results of corresponding I-V characteristics due to effects of geometry of the field emitter, location of the gates, distance between the anode and cathode, magnitude of the applied voltage on the gates are discussed in the presentation

Published in:

Plasma Science, 2005. ICOPS '05. IEEE Conference Record - Abstracts. IEEE International Conference on

Date of Conference:

20-23 June 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.