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A DC-7 GHz Small-Area Distributed Amplifier Using 5-port Inductors in a 180nm Si CMOS Technology

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4 Author(s)
Takeshi Ito ; Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503 Japan. Tel: +81-45-924-5031, Fax: +81-45-924-5166, E-mail: paper@lsi.pi.titech.ac.jp ; Daisuke Kawazoe ; Kenichi Okada ; Kazuya Masu

This paper proposes a novel small-area distributed amplifler (DA), which utilizes two 5-port inductors to replace eight inductors. The DA is fabricated using a standard 180 nm CMOS process with 6 metal layers. The layout area of DA is 0.33 mm2. It is about 50 % as large as conventional DAs, and it has power gain of 6.3 dB and noise figure of 6 dB at DC-7 GHz.

Published in:

Solid-State Circuits Conference, 2006. ASSCC 2006. IEEE Asian

Date of Conference:

13-15 Nov. 2006