By Topic

A Software Technique to Improve Yield of Processor Chips in Presence of Ultra-Leaky SRAM Cells Caused by Process Variation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Goudarzi, M. ; Syst. LSI Res. Center, Kyushu Univ., Fukuoka ; Ishihara, T. ; Yasuura, H.

Exceptionally leaky transistors are increasingly more frequent in nano-scale technologies due to lower threshold voltage and its increased variation. Such leaky transistors may even change position with changes in the operating voltage and temperature, and hence, redundancy at circuit-level is not sufficient to tolerate such threats to yield. We show that in SRAM cells this leakage depends on the cell value and propose a first software-based runtime technique that suppresses such abnormal leakages by storing safe values in the corresponding cache lines before going to standby mode. Analysis shows the performance penalty is, in the worst case, linearly dependent to the number of so-cured cache lines while the energy saving linearly increases by the time spent in standby mode. Analysis and experimental results on commercial processors confirm that the technique is viable if the standby duration is more than a small fraction of a second.

Published in:

Design Automation Conference, 2007. ASP-DAC '07. Asia and South Pacific

Date of Conference:

23-26 Jan. 2007