Challenges to Accuracy for the Design of Deep-Submicron RF-CMOS Circuits

Two challenges for the accurate prediction of GHz CMOS analog/RF building blocks are presented. Challenging the usage of new compact MOSFET models enhances the simulation accuracy. The capability of EKV3.0 model has been studied by applying to TOSHIBA'S 130nm RF-CMOS technology. The verification facts have shown that EKV3.0 model offered excellent modeling capability of both DC and RF (small and large signal). Challenging the efficient use of electro-magnetic (EM) with one practical setup offered successful prediction of the EM effects in the chip. Enhanced study of EM co-simulation technique that links two challenges had shown the perfect prediction of the TOSHIBA'S RF-CMOS circuit (VCO).