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Analytic Large-Signal Modeling of Silicon RF Power MOSFETs

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3 Author(s)
Fioravanti, P. ; Emerging Technol. Res. Centre, De Montfort Univ., Leicester ; Spulber, O. ; De Souza, M.M.

This paper provides novel analytic expressions and methodology for predicting the large-signal gain of RF power MOSFETs. The expressions are derived from a model that includes input and output matching impedances, source inductance, and gate resistance. Using the load line concept superimposed on a nonlinear current generator, this paper demonstrates reasonably accurate predictions of gain and gain compression point

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:55 ,  Issue: 5 )