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0.5 mu m n-MOS devices and circuits have been fabricated successfully using a thin plasma-nitrided silicon dioxide 13 nm thick, with a nitrogen content at the surface. Individual devices show very good and reproducible behaviour. 101-stage ring oscillators with 46 ps gate delay per stage have been obtained, showing that these new dielectrics will be perfectly compatible with future submicronic technologies.
Date of Publication: 17 Aug. 1989