Referenced Items are not available for this document.
0.5 mu m n-MOS devices and circuits have been fabricated successfully using a thin plasma-nitrided silicon dioxide 13 nm thick, with a nitrogen content at the surface. Individual devices show very good and reproducible behaviour. 101-stage ring oscillators with 46 ps gate delay per stage have been obtained, showing that these new dielectrics will be perfectly compatible with future submicronic technologies.
Published in:
Electronics Letters
(Volume:25
,
Issue:
17
)
Date of Publication: 17 Aug. 1989
- Page(s):
- 1181 - 1183
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 3475453
- Digital Object Identifier :
- 10.1049/el:19890792
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 17 Aug. 1989
- Sponsored by :
- Institution of Engineering and Technology
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