By Topic

Precise control of field emission current by a built-in poly-Si thin film transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
M. Nagao ; National Institute of Advanced Industrial Science and Technology (AIST), AIST Tsukuba central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan. E-mail: my.nagao@aist.go.jp ; C. Yasumurao ; S. Kanemaru ; J. Itoh

We fabricated a field emitter array integrated with a built-in poly-Si thin film transistor (TFT). The TFT structure was optimized for field emission control; especially for high withstand voltage and lowering the off current. The Si emitting tip was coated with hafnium carbide (HfC) to improve emission characteristics. HfC coating was very effective to enhance the emission and improve the emission lifetime. The emission from HfC coated FEA did not degrade for more than 9,000 h even in DC mode operation, while that of non-coated Si FEA decreased one orders of magnitude within 100 h. Emission improvement by HfC coating and precise control of field emission current by the built-in TFT are reported

Published in:

2006 International Symposium on Discharges and Electrical Insulation in Vacuum  (Volume:2 )

Date of Conference:

25-29 Sept. 2006