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The fabrication of planar pin diodes using InP/GaInAs layer growth on Si-implanted InP:Fe substrates and Be implantation is reported. Diodes with low leakage currents are obtained. At 10 V reverse bias and a diameter of 50 mu m, the authors measured 0.4 and 1.6 nA without and with substrate implant, respectively. The reverse characteristics show a strong dependence on the annealing conditions for the substrate implant.