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Ion-implanted planar pin diodes in InP/GaInAs layers grown on implanted InP:Fe

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4 Author(s)
Haussler, W. ; Siemens Res. Labs., Munchen, West Germany ; Romer, D. ; Bauer, J.G. ; Scherg, T.

The fabrication of planar pin diodes using InP/GaInAs layer growth on Si-implanted InP:Fe substrates and Be implantation is reported. Diodes with low leakage currents are obtained. At 10 V reverse bias and a diameter of 50 mu m, the authors measured 0.4 and 1.6 nA without and with substrate implant, respectively. The reverse characteristics show a strong dependence on the annealing conditions for the substrate implant.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 17 )

Date of Publication:

17 Aug. 1989

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