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Effects of gamma radiation on threshold voltages of trench isolated CMOS

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2 Author(s)
Medhurst, P L ; Plessey Res. (Caswell ; Foster, D J

Gamma radiation effects on trench isolated CMOS transistors and sidewall parasitic devices are described. Low dose saturation was observed for biased devices, this being attributable to low volume oxide films inherent to trench technology. Leakage currents generated in NMOS transistors were observed to saturate with cumulative irradiation.

Published in:

Electronics Letters  (Volume:25 ,  Issue: 17 )