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New Gate CD Control Technology Using CF 4 Plasma Treatment Following HBr/O 2 Plasma Treatment Step in Gate Etch Process Using Organic BARC

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3 Author(s)
Seong Jun Kang ; Dept. of Semicond. Mater. & Devices, Chonnam Nat. Univ., Cheonnam ; Yang Hee Joung ; Seong Yeol Mun

A new technology of resist trimming in a gate etch process using organic bottom antireflective coating (BARC) for accurate and stable gate critical dimension (CD) control of sub-0.18-mum node technology is presented in this paper. The new method uses an in situ CF4 plasma treatment following an HBr/O2 plasma treatment step as a part of the gate etch process to achieve a stable gate CD. The new method controls gate CD by trimming the photo resist masking gate line by reducing the effect of etch by-products, the source of CD variation, after etching organic BARC with HBr/O2 plasma. It shows the markedly improved gate CD capability over the conventional one using just an HBr/O2 plasma treatment for the CD control. We confirm that this new method is very useful and effective for the accurate gate CD control for sub-0.18-mum node metal-oxide semiconductor technology

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Semiconductor Manufacturing, IEEE Transactions on  (Volume:20 ,  Issue: 2 )