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Noise Characterization of 130 nm and 90 nm CMOS Technologies for Analog Front-end Electronics

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5 Author(s)
M. Manghisoni ; Università di Bergamo, Dipartimento di Ingegneria Industriale, Viale Marconi, 5, I-24044 Dalmine (BG), Italy telephone: +39 0352052311, fax: +39 035562779, e-mail:; INFN, Sezione di Pavia, Via Bassi 6, I-27100, Italy. ; L. Ratti ; V. Re ; V. Speziali
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Deep-submicron complementary MOS processes have made the development of ASICs for HEP instrumentation possible. In the last few years CMOS commercial technologies of the quarter micron node have been extensively used in the design of the readout electronics for highly granular detection systems in the particle physics environment. IC designers are now moving to 130 nm CMOS technologies, or even to the next technology node, to implement readout integrated circuits for silicon strip and pixel detectors, in view of future HEP applications. In order to evaluate how scaling down of the device features affects their performances, continuous technology monitoring is mandatory. In this work the results of signal and noise measurements carried out on CMOS devices in 130 nm and 90 nm commercial processes are presented. Data obtained from the measurements provide a powerful tool to establish design criteria in nanoscale CMOS processes for detector front-ends and can be used to evaluate the resolution limits achievable for low-noise charge sensitive amplifiers in the 100-nm minimum feature size range.

Published in:

2006 IEEE Nuclear Science Symposium Conference Record  (Volume:1 )

Date of Conference:

Oct. 29 2006-Nov. 1 2006