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In this paper, we describe the heteroepitaxial growth of single-crystal 3C-SiC (cubic silicon carbide) thin films on Si (100) wafers by atmospheric pressure chemical vapor deposition (APCVD) at 1350degC for MEMS applications, in which hexamethyildisilane (HMDS, Si2(CH3)6) was used as a safe organosilane source. The HMDS flow rate was 0.5 seem and the H2 carrier gas flow rate was 2.5 slm. The HMDS flow rate was important in obtaining mirror like crystalline surface. The growth rate of 3C-SiC film in this work was 4.3 mum/h. The 3C-SiC epitaxial film grown on the Si (100) substrate was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and Raman scattering, respectively. These results show that the main chemical components of grown 3C-SiC films have formation of single-crystal 3C-SiC, the films have a very good crystal quality without twins, defects and dislocations and very low residual stress.